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NES1823P-100

NEC
Part Number NES1823P-100
Manufacturer NEC
Description 100W L-BAND PUSH-PULL POWER GaAs MESFET
Published May 7, 2005
Detailed Description PRELIMINARY DATA SHEET N-CHANNEL GaAs MESFET NES1823P-100 100W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES...
Datasheet PDF File NES1823P-100 PDF File

NES1823P-100
NES1823P-100

Overview
PRELIMINARY DATA SHEET N-CHANNEL GaAs MESFET NES1823P-100 100W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high power transmitter applications for IMT-2000 and PCS/PCN base station systems.
It is capable of delivering 100 watts of output power with high linear gain, high efficiency and excellent distortion.
Its primary band is 1.
8 to 2.
3 GHz with different maching.
The device employs Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide and nitride passivation for superior performance, thermal characteristics, and reliability.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES • Push-pull type N-channel GaAs MESFET • High Output Power : 100 W TYP.
• High Linear Gain : 11.
0 dB TYP.
• High Drain Efficiency: 50 % TYP.
@VDS = 10 V, IDset = 6 A, f = 2.
2 GHz ORDERING INFORMATION (PLAN) Part Number NES1823P-100 T-92 Package Supplying Form ESD protective envelope Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NES1823P-100) ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Operation in excess of any one of these parameters may result in permanent damage.
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGSO ID IG PT Tch Tstg Ratings 15 –7 76 440 220 Note Unit V V A mA W °C °C 175 –65 to +175 Note TC = 25°C Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive device.
The information in this document is subject to change without notice.
Document No.
P13839EJ1V0DS00 (1st edition) Date Published November 1998 N CP(K) Printed in Japan © 1998 NES1823P-100 RECOMMENDED OPERATING LIMITS Parameter Drain to Source Voltage Gain Compression Channel Temperature Set Drain Current Gate Resistance Note 1 Symbol VDS Gco...


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