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NEZ1011-2E

NEC
Part Number NEZ1011-2E
Manufacturer NEC
Description 2W X / Ku-BAND POWER GaAs MESFET
Published May 7, 2005
Detailed Description DATA SHEET N-CHANNEL GaAs MESFET NEZ1011-2E, NEZ1414-2E 2W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-2E an...
Datasheet PDF File NEZ1011-2E PDF File

NEZ1011-2E
NEZ1011-2E

Overview
DATA SHEET N-CHANNEL GaAs MESFET NEZ1011-2E, NEZ1414-2E 2W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-2E and NEZ1414-2E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band.
The internal input and output matching enables guaranteed performance to be achieved with only a 50 Ω external circuit.
To reduce thermal resistance the device has a PHS (Plated Heat Sink) structure.
The device incorporates a WSi (tungsten silicide) gate structure for high reliability.
FEATURES • High Output Power : Po (1 dB) = +34.
0 dBm typ.
• High Linear Gain • High Efficiency : 8.
5 dB typ.
(NEZ1011-2E), 7.
5 dB typ.
(NEZ1414-2E) : 30 % typ.
• Input and Output Internally Matched for Optimum performance ORDERING INFORMATION Part Number NEZ1011-2E NEZ1414-2E T-78 Package Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NEZ1011-2E, NEZ1414-2E) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Operation in excess of any one of these parameters may result in permanent damage.
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Symbol VDS VGS IDS Ratings 15 –7 3.
0 (NEZ1011-2E) 2.
5 (NEZ1414-2E) +20 –20 15 175 –65 to +175 Unit V V A Gate Forward Current Gate Reverse Current Total Power Dissipation Channel Temperature Storage Temperature IGF IGR PT Tch Tstg mA mA W °C °C Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive device.
The information in this document is subject to change without notice.
Document No.
P13725EJ1V0DS00 (1st edition) Date Published September 1998 N CP(K) Printed in Japan © 1998 NEZ1011-2E, NEZ1414-2E RECOMMENDED OPERATING LIMITS Characteristics Drain to Source Voltage Gain Compression Channel Temperature Gate Resistance Note Symbol VDS Gcomp Tch Rg Test Condition MIN.
9.
0 TYP.
9.
0 MAX.
9.
0 3 +130 Unit V dB °C Ω 200 1000 1000 Note Rg is the series resistance between the gate supply and t...


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