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MMBD914

Infineon Technologies AG
Part Number MMBD914
Manufacturer Infineon Technologies AG
Description Silicon Switching Diode
Published May 9, 2005
Detailed Description Silicon Switching Diode • For high-speed switching applications • Pb-free (RoHS compliant) package1) • Qualified accordi...
Datasheet PDF File MMBD914 PDF File

MMBD914
MMBD914

Overview
Silicon Switching Diode • For high-speed switching applications • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 SMBD914/MMBD914.
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SMBD914/MMBD914 !  Type SMBD914/MMBD914 Package SOT23 Configuration single Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage Peak reverse voltage Forward current Non-repetitive peak surge forward current t = 1 µs t=1s VR VRM IF IFSM Total power dissipation TS ≤ 54°C Junction temperature Storage temperature Ptot Tj Tstg Thermal Resistance Parameter Junction - soldering point2) SMBD914/MMBD914 Symbol RthJS 1Pb-containing package may be available upon special request 2For calculation of RthJA please refer to Application Note Thermal Resistance Value 100 100 250 4.
5 0.
5 370 150 -65 .
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150 Value ≤ 260 Marking s5D Unit V mA A mW °C Unit K/W 1 2007-03-28 SMBD914/MMBD914.
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Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min.
typ.
max.
DC Characteristics Breakdown voltage V(BR) 100 - - I(BR) = 100 µA Reverse current IR VR = 20 V - - 0.
025 VR = 75 V - - 0.
1 VR = 20 V, TA = 150 °C - - 30 VR = 75 V, TA = 150 °C - - 50 Forward voltage IF = 1 mA IF = 10 mA IF = 50 mA IF = 100 mA IF = 150 mA VF - - 715 - - 855 - - 1000 - - 1200 - - 1250 Unit V µA mV AC Characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, measured at IR = 1mA , RL = 100 Ω CT trr - - 2 pF - - 4 ns Test circuit for reverse recovery time D.
U.
T.
Oscillograph ΙF Pulse generator: tp = 100ns, D = 0.
05, tr = 0.
6ns, Ri = 50Ω Oscillograph: R = 50Ω, tr = 0.
35ns, C ≤ 1pF EHN00019 2 2007-03-28 Reverse current IR = ƒ (TA) VR = Parameter 10 5 nA 10 4 10 3 70 V 25 V 10 2 SMBD914/MMBD914.
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Forward Voltage VF = ƒ (TA) IF = Parameter 1.
0 SMBD 914 V VF Ι F = 100 mA 10 mA 0.
5 1 mA 0.
1 mA EHB00114 IR IF 10 1 0 25 50 75 100 °C 150 TA Forward current IF = ƒ (VF) TA = 25°C 150 SMBD 7000 ΙF m...


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