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MMBF4416LT1

ON
Part Number MMBF4416LT1
Manufacturer ON
Description JFET VHF/UHF Amplifier Transistor
Published May 9, 2005
Detailed Description www.DataSheet4U.com MMBF4416LT1 Preferred Device JFET VHF/UHF Amplifier Transistor N−Channel Features http://onsemi.co...
Datasheet PDF File MMBF4416LT1 PDF File

MMBF4416LT1
MMBF4416LT1

Overview
www.
DataSheet4U.
com MMBF4416LT1 Preferred Device JFET VHF/UHF Amplifier Transistor N−Channel Features http://onsemi.
com 2 SOURCE • Pb−Free Package is Available MAXIMUM RATINGS Rating Drain−Source Voltage Drain−Gate Voltage Gate−Source Voltage Gate Current Symbol VDS VDG VGS IG Value 30 30 30 10 Unit Vdc Vdc Vdc mAdc 3 Symbol PD 225 1.
8 RqJA TJ, Tstg 556 −55 to +150 mW mW/°C °C/W °C Max Unit 1 2 SOT−23 (TO−236) CASE 318 STYLE 10 1 DRAIN 3 GATE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously.
If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1.
FR−5 = 1.
0 x 0.
75 x 0.
062 in.
1 M6A M G G M6A = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location.
ORDERING INFORMATION Device MMBF4416LT1 MMBF4416LT1G Package SOT−23 Shipping † 3,000 / Tape & Reel SOT−23 3,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2006 1 February, 2006 − Rev.
3 Publication Order Number: MMBF4416LT1/D MMBF4416LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Gate−Source Breakdown Voltage (IG = 1.
0 mAdc, VDS = 0) Gate Reverse Current (VGS = 20 Vdc, VDS = 0) (VGS = 20 Vdc, VDS = 0, TA = 150°C) V(BR)GSS IGSS VGS(off) ...


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