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MMBF5460LT1

ON
Part Number MMBF5460LT1
Manufacturer ON
Description JFET General Purpose Transistor
Published May 9, 2005
Detailed Description www.DataSheet4U.com MMBF5460LT1 JFET − General Purpose Transistor P−Channel Features http://onsemi.com 2 SOURCE • Pb−F...
Datasheet PDF File MMBF5460LT1 PDF File

MMBF5460LT1
MMBF5460LT1

Overview
www.
DataSheet4U.
com MMBF5460LT1 JFET − General Purpose Transistor P−Channel Features http://onsemi.
com 2 SOURCE • Pb−Free Package is Available MAXIMUM RATINGS Rating Drain−Gate Voltage Reverse Gate−Source Voltage Forward Gate Current Symbol VDG VGSR IGF Value 40 40 10 Unit Vdc Vdc mAdc 1 DRAIN 3 GATE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD 225 1.
8 RqJA TJ, Tstg 556 −55 to +150 mW mW/°C °C/W °C SOT−23 (TO−236) CASE 318 STYLE 10 Max Unit 1 2 3 Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously.
If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1.
FR−5 = 1.
0 x 0.
75 x 0.
062 in.
MARKING DIAGRAM M6E M G G 1 M6E = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location.
ORDERING INFORMATION Device MMBF5460LT1 MMBF5460LT1G Package SOT−23 Shipping † 3,000 / Tape & Reel SOT−23 3,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006 1 February, 2006 − Rev.
2 Publication Order Number: MMBF5460LT1/D MMBF5460LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Gate−Source Breakdown Voltage (IG = 10 mAdc, VDS = 0) Gate Reverse Current (VGS = 20 Vdc, VDS = 0) (VGS = 20 Vdc, VDS = 0, TA = 100°C) Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 1.
0 mAdc) Gate Source Voltage (VDS = 15 Vdc, ID = 0.
1 mAdc) ON CHARACTERISTICS Zero−Gate−V...


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