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MMBF5484LT1

ON
Part Number MMBF5484LT1
Manufacturer ON
Description JFET Transistor
Published May 9, 2005
Detailed Description www.DataSheet4U.com MMBF5484LT1 Preferred Device JFET Transistor N−Channel Features • Pb−Free Package is Available MA...
Datasheet PDF File MMBF5484LT1 PDF File

MMBF5484LT1
MMBF5484LT1

Overview
www.
DataSheet4U.
com MMBF5484LT1 Preferred Device JFET Transistor N−Channel Features • Pb−Free Package is Available MAXIMUM RATINGS Rating Drain−Gate Voltage Reverse Gate−Source Voltage Forward Gate Current Continuous Device Dissipation at or Below TC = 25°C Linear Derating Factor Storage Channel Temperature Range Symbol VDG VGS(r) IG(f) PD 200 2.
8 Tstg −65 to +150 mW mW/°C °C Value 25 25 10 Unit Vdc Vdc mAdc http://onsemi.
com 2 SOURCE 3 GATE 1 DRAIN THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD 225 1.
8 RqJA TJ, Tstg 556 −55 to +150 mW mW/°C °C/W °C Max Unit 1 2 3 SOT−23 (TO−236) CASE 318 STYLE 10 MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously.
If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1.
FR−5 = 1.
0 x 0.
75 x 0.
062 in.
1 M6B M G G M6B = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location.
ORDERING INFORMATION Device MMBF5484LT1 MMBF5484LT1G Package SOT−23 Shipping † 3,000 / Tape & Reel SOT−23 3,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2006 1 February, 2006 − Rev.
3 Publication Order Number: MMBF5484LT1/D MMBF5484LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Gate−Source Breakdown Voltage (IG...


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