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MMBT2131T3

ON
Part Number MMBT2131T3
Manufacturer ON
Description General Purpose Transistors
Published May 9, 2005
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT2131T1/D Product Preview General Purpose Transistor...
Datasheet PDF File MMBT2131T3 PDF File

MMBT2131T3
MMBT2131T3

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT2131T1/D Product Preview General Purpose Transistors PNP Bipolar Junction Transistor (Complementary NPN Device: MMBT2132T1/T3) NOTE: Voltage and Current are negative for the PNP Transistor.
MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current Base Current Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance — Junction to Ambient (1) Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance — Junction to Ambient (2) Operating and Storage Temperature Range Symbol VCEO VCBO VEBO IC IB PD PD RqJA PD PD RqJA TJ, Tstg Value 30 40 5.
0 700 350 342 178 366 665 346 188 – 55 to +150 Unit V V V mA mA mW mW °C/W mW mW °C/W °C MMBT2131T1 MMBT2131T3 0.
7 AMPERES 30 VOLTS — V(BR)CEO 342 mW 6 5 4 1 2 3 CASE 318 F– 02, STYLE 2 SC–59 — 6 Lead COLLECTOR PINS 2, 5 BASE P...


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