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MMBT2907A

Infineon Technologies AG
Part Number MMBT2907A
Manufacturer Infineon Technologies AG
Description PNP Transistor
Published May 9, 2005
Detailed Description PNP Silicon Switching Transistor • Low collector-emitter saturation voltage • Complementary type: SMBT2222A / MMBT2222A ...
Datasheet PDF File MMBT2907A PDF File

MMBT2907A
MMBT2907A

Overview
PNP Silicon Switching Transistor • Low collector-emitter saturation voltage • Complementary type: SMBT2222A / MMBT2222A (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 SMBT2907A/MMBT2907A 32 1 Type Marking SMBT2907A/MMBT2907A s2F Pin Configuration 1=B 2=E 3=C Package SOT23 Maximum Ratings Parameter Symbol Value Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Peak base current Total power dissipation TS ≤ 77 °C Junction temperature Storage temperature VCEO VCBO VEBO IC IB IBM Ptot Tj Tstg 60 60 5 600 100 200 330 150 -65 .
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150 Thermal Resistance Parameter Symbol Value Junction - soldering point1) RthJS ≤ 220 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA mW °C Unit K/W 1 2011-09-30 SMBT2907A/MMBT2907A Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min.
typ.
max.
DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 60 - - IC = 10 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 60 - - IC = 10 µA, IE = 0 Emitter-base breakdown voltage V(BR)EBO 5 - - IE = 10 µA, IC = 0 Collector-base cutoff current ICBO VCB = 50 V, IE = 0 - - 0.
01 VCB = 50 V, IE = 0 , TA = 150 °C - - 10 Emitter-base cutoff current IEBO - - 10 VEB = 5 V, IC = 0 DC current gain1) hFE IC = 100 µA, VCE = 10 V 75 - - IC = 1 mA, VCE = 10 V 100 - - IC = 10 mA, VCE = 10 V 100 - - IC = 150 mA, VCE = 10 V 100 - 300 IC = 500 mA, VCE = 10 V 50 - - Collector-emitter saturation voltage1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Base emitter saturation voltage-1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA VCEsat - - 0.
4 - - 1.
6 VBEsat - - 1.
3 - - 2.
6 1Puls test: t ≤ 300µs, D = 2% Unit V µA nA - V 2 2011-09-30 SMBT2907A/MMBT2907A Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min.
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