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MMBT3702

Fairchild
Part Number MMBT3702
Manufacturer Fairchild
Description PNP General Purpose Amplifier
Published May 9, 2005
Detailed Description MPS3702 / MMBT3702 Discrete POWER & Signal Technologies MPS3702 MMBT3702 C E C BE TO-92 SOT-23 Mark: 137 B PNP Ge...
Datasheet PDF File MMBT3702 PDF File

MMBT3702
MMBT3702

Overview
MPS3702 / MMBT3702 Discrete POWER & Signal Technologies MPS3702 MMBT3702 C E C BE TO-92 SOT-23 Mark: 137 B PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500mA.
Sourced from Process 63.
See PN2907A for characteristics.
Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 25 40 5.
0 800 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPS3702 625 5.
0 83.
3 200 Max *MMBT3702 350 2.
8 357 Units mW mW/ °C °C/W °C/W *Device mounted on FR-4 PCB 1.
6" X 1.
6" X 0.
06.
" © 1997 Fairchild Semiconductor Corporation MPS3702 / MMBT3702 PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current I C = 10 mA, I B = 0 I C = 100 µ A, IE = 0 I E = 100 µA, I C = 0 VCB = 20 V, IE = 0 VEB = 3.
0 V, I C = 0 25 40 5.
0 100 100 V V V nA nA ON CHARACTERISTICS* hFE VCE(sat) VBE(on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage VCE = 5.
0 V, IC = 50 mA...


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