DatasheetsPDF.com

MMBT5087

ON
Part Number MMBT5087
Manufacturer ON
Description Low Noise Transistor
Published May 9, 2005
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT5087LT1/D Low Noise Transistor PNP Silicon 1 BASE C...
Datasheet PDF File MMBT5087 PDF File

MMBT5087
MMBT5087

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT5087LT1/D Low Noise Transistor PNP Silicon 1 BASE COLLECTOR 3 MMBT5087LT1 Motorola Preferred Device MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value –50 –50 –3.
0 –50 2 EMITTER Unit Vdc Vdc Vdc mAdc 1 2 3 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) DEVICE MARKING MMBT5087LT1 = 2Q THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.
8 RθJA PD 556 300 2.
4 RθJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –1.
0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = –100 µAdc, IE = 0) Collector Cutoff Current (VCB = –10 Vdc, IE = 0) (VCB = –35 Vdc, IE = 0) 1.
FR–5 = 1.
0 x 0.
75 x 0.
062 in.
2.
Alumina = 0.
4 x 0.
3 x 0.
024 in.
99.
5% alumina V(BR)CEO V(BR)CBO ICBO — — –10 –50 –50 –50 — — Vdc Vdc nAdc Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc.
1996 1 MMBT5087LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = –100 µAdc, VCE = –5.
0 Vdc) (IC = –1.
0 mAdc, VCE = –5.
0 Vdc) (IC = –10 mAdc, VCE = –5.
0 Vdc) Collector–Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.
0 mAdc) Base–Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.
0 mAdc) hFE 250 250 250 VCE(sat) VBE(sat) — — 800 — — –0.
3 0.
85 Vd...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)