DatasheetsPDF.com

MMBT6427

Diodes Incorporated
Part Number MMBT6427
Manufacturer Diodes Incorporated
Description NPN Transistor
Published May 9, 2005
Detailed Description MMBT6427 NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features • Epitaxial Planar Die Construction • Ideal for Low Power Am...
Datasheet PDF File MMBT6427 PDF File

MMBT6427
MMBT6427


Overview
MMBT6427 NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features • Epitaxial Planar Die Construction • Ideal for Low Power Amplification and Switching • High Current Gain • Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 1 and 4) Mechanical Data • Case: SOT-23 • Case Material: Molded Plastic.
UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminals: Solderable per MIL-STD-202, Method 208 • Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe).
• Terminal Connections: See Diagram • Marking (See Page 3): K1D • Ordering & Date Code Information: See Page 3 • Weight: 0.
008 grams (approximate) A C BC B TOP VIEW E ED G H K J C L BE M SOT-23 Dim Min Max A 0.
37 0.
51 B 1.
20 1.
40 C 2.
30 2.
50 D 0.
89 1.
03 E 0.
45 0.
60 G 1.
78 2.
05 H 2.
80 3.
00 J 0.
013 0.
10 K 0.
903 1.
10 L 0.
45 0.
61 M 0.
085 0.
180 α 0° 8° All Dimensions in mm Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Symbol VCBO VCEO VEBO IC Value 40 40 12 500 Unit V V V mA Thermal Characteristics Characteristic Power Dissipation (Note 2) @ TA = 25°C Thermal Resistance, Junction to Ambient (Note 2)@ TA = 25°C Operating and Storage Temperature Range Symbol PD RθJA TJ, TSTG Value 300 417 -55 to +150 Unit mW °C/W °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 3) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 3) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Symbol Min Max Unit Test Condition V(BR)CBO 40 ⎯ V IC = 100μA, IE = 0 V(BR)CEO 40 ⎯ V IC = 10mA, IB = 0 V(BR)EBO 12...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)