DatasheetsPDF.com

MMDF7N02Z

Motorola
Part Number MMDF7N02Z
Manufacturer Motorola
Description Dual MOSFET
Published May 9, 2005
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMDF7N02Z/D Advance Information Medium Power Surface Mo...
Datasheet PDF File MMDF7N02Z PDF File

MMDF7N02Z
MMDF7N02Z

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMDF7N02Z/D Advance Information Medium Power Surface Mount Products MMDF7N02Z Motorola Preferred Device TMOS Dual N-Channel with Monolithic Zener ESD Protected Gate EZFETs™ are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density TMOS process and contain monolithic back–to–back zener diodes.
These zener diodes provide protection against ESD and unexpected transients.
These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance.
They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time.
D EZFET devices are designed for use in low voltage, high speed switching applications where power efficiency is important.
Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones.
They can also be used for G low voltage motor controls in mass storage products such as disk drives and tape drives.
• Zener Protected Gates Provide Electrostatic Discharge Protection • Designed to Withstand 200 V Machine Model and 2000 V Human Body Model • Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Logic Level Gate Drive — Can Be Driven by Logic ICs • Miniature SO–8 Surface Mount Package — Saves Board Space • Diode Is Characterized for Use In Bridge Circuits • Diode Exhibits High Speed, With Soft Recovery • IDSS Specified at Elevated Temperature • Mounting Information for SO–8 Package Provided MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain–to–Source Voltage Drain–to–Gate Voltage (RGS = 1.
0 MΩ) Gate–to–Source Voltage — Continuous Drain Current — Continuous @ TA = 25°C (1) Drain Current — Continuous @ TA = 70°C (1) Drain Current — Pulsed Drain Current (3) Total Power Dissipation @ TA = 25°C (1) Linear Derating Factor @ TA = 25°C (1) Tota...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)