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MMFT2N25E

Motorola
Part Number MMFT2N25E
Manufacturer Motorola
Description Power MOSFET
Published May 9, 2005
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT2N25E/D Product Preview TMOS E-FET™ High Energy Pow...
Datasheet PDF File MMFT2N25E PDF File

MMFT2N25E
MMFT2N25E

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT2N25E/D Product Preview TMOS E-FET™ High Energy Power FET N–Channel Enhancement–Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain–to–source diode with fast recovery time.
Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Capability Specified at Elevated Temperature • Internal Source–to–Drain Diode Designed to Replace External Zener Transient Suppressor – Absorbs High Energy in the Avalanche Mode • Source–to–Drain Diode Recovery Time Comparable to Discrete Fast Recovery Diode MAXIMUM RATINGS (TC = ...


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