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MMPQ3906

Fairchild
Part Number MMPQ3906
Manufacturer Fairchild
Description PNP Multi-Chip General Purpose Amplifier
Published May 9, 2005
Detailed Description FFB3906 / FMB3906 / MMPQ3906 FFB3906 E2 B2 C1 FMB3906 C2 E1 C1 E1 MMPQ3906 E2 B2 E3 B3 E4 B4 B1 SC70-6 Mark: .2A pi...
Datasheet PDF File MMPQ3906 PDF File

MMPQ3906
MMPQ3906

Overview
FFB3906 / FMB3906 / MMPQ3906 FFB3906 E2 B2 C1 FMB3906 C2 E1 C1 E1 MMPQ3906 E2 B2 E3 B3 E4 B4 B1 SC70-6 Mark: .
2A pin #1 C2 B1 E1 pin #1 B1 B2 E2 C2 C1 C3 C2 C4 C4 C3 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.
Units inside the carrier can be of either orientation and will not affect the functionality of the device.
SuperSOT-6 Mark: .
2A SOIC-16 Mark: MMPQ3906 pin #1 C1 PNP Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA.
Sourced from Process 66.
Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 40 40 5.
0 200 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die FFB3904 300 2.
4 415 Max FMB3904 700 5.
6 180 MMPQ3904 1,000 8.
0 125 240 Units mW mW/°C °C/W °C/W °C/W  1998 Fairchild Semiconductor Corporation FFB3906 / FMB3906 / MMPQ3906 PNP Multi-Chip General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current IC = 1.
0 mA, ...


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