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SQ721

Part Number	SQ721
Manufacturer	Polyfet RF Devices
Description	SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Published	May 9, 2005
Detailed Description	polyfet rf devices SQ721 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF ...
Datasheet	SQ721 PDF File

Overview

polyfet rf devices SQ721 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency.
TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 25.
0 Watts Push - Pull Package Style AQ HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 110 Watts Junction to Case Thermal Resistance o 1.
40 C/W Maximum Junction Temperature o 2...

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