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SR704U

Part Number	SR704U
Manufacturer	Polyfet RF Devices
Description	SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Published	May 9, 2005
Detailed Description	polyfet rf devices SR704U General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF...
Datasheet	SR704U PDF File

Overview

polyfet rf devices SR704U General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency.
TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 150.
0 Watts Push - Pull Package Style AR HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 350 Watts Junction to Case Thermal Resistance o 0.
50 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V 20.
0 A RF CHARACTERISTICS ( 150.
0 WATTS OUTPUT ) SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 10 55 20:1 ...

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