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SR746

Polyfet RF Devices
Part Number SR746
Manufacturer Polyfet RF Devices
Description SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Published May 9, 2005
Detailed Description polyfet rf devices SR746 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF ...
Datasheet PDF File SR746 PDF File

SR746
SR746


Overview
polyfet rf devices SR746 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency.
TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 300.
0 Watts Push - Pull Package Style AR HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 465 Watts Junction to Case Thermal Resistance o 0.
35 C/W Maximum Junction Temperature o ...



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