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NM93CS06

Fairchild
Part Number NM93CS06
Manufacturer Fairchild
Description 256-Bit Serial EEPROM
Published May 9, 2005
Detailed Description NM93CS06 (MICROWIRE Bus Interface) 256-Bit Serial EEPROM with Data Protect and Sequential Read February 2000 NM93CS06 ...
Datasheet PDF File NM93CS06 PDF File

NM93CS06
NM93CS06

Overview
NM93CS06 (MICROWIRE Bus Interface) 256-Bit Serial EEPROM with Data Protect and Sequential Read February 2000 NM93CS06 (MICROWIRE™ Bus Interface) 256-Bit Serial EEPROM with Data Protect and Sequential Read General Description NM93CS06 is a 256-bit CMOS non-volatile EEPROM organized as 16 x 16-bit array.
This device features MICROWIRE interface which is a 4-wire serial bus with chipselect (CS), clock (SK), data input (DI) and data output (DO) signals.
This interface is compatible to many of standard Microcontrollers and Microprocessors.
NM93CS06 offers programmable write protection to the memory array using a special register called Protect Register.
Selected memory locations can be protected against write by programming this Protect Register with the address of the first memory location to be protected (all locations greater than or equal to this first address are then protected from further change).
Additionally, this address can be “permanently locked” into the device, making all future attempts to change data impossible.
In addition this device features “sequential read”, by which, entire memory can be read in one cycle instead of multiple single byte read cycles.
There are 10 instructions implemented on the NM93CS06, 5 of which are for memory operations and the remaining 5 are for Protect Register operations.
This device is fabricated using Fairchild Semiconductor floating-gate CMOS process for high reliability, high endurance and low power consumption.
“LZ” and “L” versions of NM93CS06 offer very low standby current making them suitable for low power applications.
This device is offered in both SO and TSSOP packages for small space considerations.
Features I Wide VCC 2.
7V - 5.
5V I Programmable write protection I Sequential register read I Typical active current of 200µA 10µA standby current typical 1µA standby current typical (L) 0.
1µA standby current typical (LZ) I No Erase instruction required before Write instruction I Self timed write cycle I Device statu...


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