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NTD110N02R

Part Number	NTD110N02R
Manufacturer	ON
Description	Power MOSFET
Published	May 9, 2005
Detailed Description	NTD110N02R Power MOSFET 24 V, 110 A, N−Channel DPAK Features • • • • • • Planar HD3e Process for Fast Switching Perfor...
Datasheet	NTD110N02R PDF File

Overview

NTD110N02R Power MOSFET 24 V, 110 A, N−Channel DPAK Features • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in High−Efficiency DC−DC Converters Pb−Free Packages are Available http://onsemi.
com V(BR)DSS 24 V RDS(on) TYP 4.
1 mW @ 10 V N−Channel D ID MAX 110 A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Thermal Resistance − Junction−to−Case Total Power Dissipation @ TC = 25°C Drain Current − Continuous @ TC = 25°C, Chip − Continuous @ TC = 25°C, Limited by Package − Continuous @ TA = 25°C, Limited by Wires − Single Pulse (tp = 10 ms) Thermal Resistance − Junction−to−Ambient (Note 1) − Total Power Dissipation @ TA = 25°C − Drain Current − Continuous @ TA = 25°C Thermal Resistance − Junction−to−Ambient (Note 2) − Total Power Dissipation @ TA = 25°C − Drain Current ...

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