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NTE222

NTE
Part Number NTE222
Manufacturer NTE
Description Field Effect Transistor
Published May 9, 2005
Detailed Description NTE222 Field Effect Transistor Dual Gate N–Channel MOSFET Absolute Maximum Ratings: Drain–Source Voltage, VDS . . . . . ...
Datasheet PDF File NTE222 PDF File

NTE222
NTE222

Overview
NTE222 Field Effect Transistor Dual Gate N–Channel MOSFET Absolute Maximum Ratings: Drain–Source Voltage, VDS .
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25V Drain–Gate Voltage, VDG .
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30V Drain Current, ID .
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50mA Reverse Gate Current, IG .
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–10mA Forward Gate Current, IGF .
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10mA Total Device Dissipation (TA = +25°C), PD .
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360mW Derate Above 25°C .
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