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NTE236

Part Number	NTE236
Manufacturer	NTE
Description	Silicon NPN Transistor
Published	May 9, 2005
Detailed Description	NTE236 Silicon NPN Transistor Final RF Power Output (PO = 16W, 27MHz, SSB) Description: The NTE236 is a silicon NPN epit...
Datasheet	NTE236 PDF File

Overview

NTE236 Silicon NPN Transistor Final RF Power Output (PO = 16W, 27MHz, SSB) Description: The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications.
Features: D High Power Gain: Gpe ≥ 12dB (VCC = 12V, PO = 16W, f = 27MHz) D Ability to Withstand Infinite VSWR Load when Operated at: VCC = 16V, PO = 20W, f = 27MHz Application: D 10 to 14 Watt Output Power Class AB Amplifier Applications in HF band Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector–Base Voltage, VCBO 60V Collector–Emitter Volt...

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