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NTE261

Part Number	NTE261
Manufacturer	NTE
Description	Silicon Complementary Transistors
Published	May 9, 2005
Detailed Description	NTE261 (NPN) & NTE262 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE261 (NPN) a...
Datasheet	NTE261 PDF File

Overview

NTE261 (NPN) & NTE262 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications.
Features: D High DC Current Gain: hFE = 2500 Typ @ IC = 4A D Collector–Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA D Low Collector–Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 3A = 4V Max @ IC = 5A D Monolithic Construction with Built–In Base–Emitter Shunt Resistor Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO .
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100V Collector–Base Voltage, VCB .
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100V Emitter–Base Voltage, VEB .
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5V Collector Current, IC Continuous .
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5A Peak .
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8A Base Current, IB .
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120mA Total Power Dissipation (TC = +25°C), PD .
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65W Derate Above 25°C .
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0.
52W/°C Total Power Dissipation (TA = +25°C), PD .
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2W Derate Above 25°C .
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