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NTE296

Part Number	NTE296
Manufacturer	NTE
Description	Silicon PNP Transistor General Purpose Amplifier
Published	May 9, 2005
Detailed Description	NTE296 Silicon PNP Transistor General Purpose Amplifier Description: The NTE296 is a silicon PNP transistor in a TO202 t...
Datasheet	NTE296 PDF File

Overview

NTE296 Silicon PNP Transistor General Purpose Amplifier Description: The NTE296 is a silicon PNP transistor in a TO202 type case designed for general purpose applications requiring high breakdown voltages, low saturation voltages and low capacitance.
Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO .
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300V Collector–Base Voltage, VCB .
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300V Emitter–Base Voltage, VEB .
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5V Continuous Collector Current, IC .
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500mA Total Power Dissipation (TA = +25°C), PD .
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2W Derate Above 25°C .
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16mW/°C Total Power Dissipation (TC = +25°C), PD .
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10W Derate Above 25°C .
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80mW/°C Operating Junction Temperature Range, TJ .
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–55° to +150°C Storage Temperature Range, Tstg .
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–55° to +150°C Thermal Resistance, Junction–to–Ambient, RthJA .
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62.
5°C/W Thermal Resistance, Junction–to–Case, RthJC .
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12.
5°C/W Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter OFF Characteristics Collector–...

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