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PMEG3002AEB

Philips
Part Number PMEG3002AEB
Manufacturer Philips
Description Low VF MEGA Schottky barrier diode
Published May 9, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET M3D319 PMEG3002AEB Low VF MEGA Schottky barrier diode Product specification 2002 Ma...
Datasheet PDF File PMEG3002AEB PDF File

PMEG3002AEB
PMEG3002AEB

Overview
DISCRETE SEMICONDUCTORS DATA SHEET M3D319 PMEG3002AEB Low VF MEGA Schottky barrier diode Product specification 2002 May 06 Philips Semiconductors Product specification Low VF MEGA Schottky barrier diode FEATURES • Forward current: 0.
2 A • Reverse voltage: 30 V • Very low forward voltage • Ultra small SMD package.
APPLICATIONS • Ultra high-speed switching • High efficiency DC/DC conversion • Voltage clamping • Inverse-polarity protection • Low voltage rectification • Low power consumption applications.
DESCRIPTION Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra small SMD plastic package.
4 columns PMEG3002AEB PINNING PIN 1 2 DESCRIPTION cathode anode 1 2 MGU328 Marking code: B1.
The marking bar indicates the cathode.
Fig.
1 Simplified outline (SOD523; SC-79) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL VR IF IFRM IFSM Tstg Tj Tamb PARAMETER continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature operating ambient temperature tp ≤ 1 s; δ ≤ 0.
5 tp = 8.
3 ms half sinewave; JEDEC method CONDITIONS − − − − −65 − −65 MIN.
MAX.
30 200 300 1 +150 125 +125 V mA mA A °C °C °C UNIT 2002 May 06 2 Philips Semiconductors Product specification Low VF MEGA Schottky barrier diode ELECTRICAL CHARACTERISTICS Tamb = 25 °C; unless otherwise specified.
SYMBOL VF PARAMETER continuous forward voltage CONDITIONS see Fig.
2 IF = 0.
1 mA IF = 1 mA IF = 10 mA IF = 100 mA IF = 200 mA IR Cd Note 1.
Pulsed test: tp = 300 µs; δ = 0.
02.
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Refer to SOD523 (SC-79) standard mounting conditions.
PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS continuous reverse current diode capacitance VR = 10 V; see Fig.
3; note 1 PMEG3002AEB TYP.
130 190 255...


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