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PN3640

Fairchild Semiconductor
Part Number PN3640
Manufacturer Fairchild Semiconductor
Description PNP Switching Transistor
Published May 9, 2005
Detailed Description PN3640 / MMBT3640 Discrete POWER & Signal Technologies PN3640 MMBT3640 C E C B TO-92 E SOT-23 Mark: 2J B PNP Swi...
Datasheet PDF File PN3640 PDF File

PN3640
PN3640

Overview
PN3640 / MMBT3640 Discrete POWER & Signal Technologies PN3640 MMBT3640 C E C B TO-92 E SOT-23 Mark: 2J B PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA.
Sourced from Process 65.
See PN4258 for characteristics.
Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 12 12 4.
0 200 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient PN3640 350 2.
8 125 357 Max *MMBT3640 225 1.
8 556 Units mW mW/ °C °C/W °C/W *Device mounted on FR-4 PCB 1.
6" X 1.
6" X 0.
06.
" © 1997 Fairchild Semiconductor Corporation PN3640 / MMBT3640 PNP Switching Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICES IB Collector-Emitter Breakdown Voltage* Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Current I C = 10 mA, IB = 0 I C = 100 µA, VBE = 0 I C = 100 µA, I E = 0 I E = 100 µ A, IC = 0 VCE = 6.
0 V, VBE = 0 VCE = 6.
0 V, VBE = 0, TA = 65° C VCE = 6.
0 V, VBE = 0 12 12 12 4.
0 0.
01 1.
0 10 V V V V µA µA nA ON CHARACTERISTICS* hFE VCE( sat) DC Current Gain Collector-Emitter Satu...


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