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PN4355

Fairchild Semiconductor
Part Number PN4355
Manufacturer Fairchild Semiconductor
Description PNP General Purpose Amplifier
Published May 9, 2005
Detailed Description PN4355 / MMBT4355 Discrete POWER & Signal Technologies PN4355 MMBT4355 C E C BE TO-92 SOT-23 Mark: 81 B PNP Gene...
Datasheet PDF File PN4355 PDF File

PN4355
PN4355


Overview
PN4355 / MMBT4355 Discrete POWER & Signal Technologies PN4355 MMBT4355 C E C BE TO-92 SOT-23 Mark: 81 B PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA.
Sourced from Process 67.
See TN4033A for characteristics.
Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Collector-Emitter Voltage Value 60 60 10 800 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25° C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient PN4355 625 5.
0 83.
3 200 Max *MMBT4355 350 2.
8 357 Units mW mW/°C °C/W °C/W *Device mounted on FR-4 PCB 1.
6" X 1.
6" X 0.
06.
" © 1997 Fairchild Semiconductor Corporation PN4355 / MMBT4355 PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Sustaining Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current IC = 1.
0 mA, I B = 0 IC = 10 µA, IE = 0 IE = 10 µA, I C = 0 VCB = 50 V, IE = 0 VEB = 5.
0 V, VCE = 0 VEB = 4.
0 V, I C = 0 60 60 5.
0 50 10 100 V V V nA µA nA ON CHARACTERISTICS hFE DC Current Gain IC = 100 µA, VCE = 10 V IC = 1.
0mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 100 mA, V...


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