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PNA4211F

Panasonic Semiconductor
Part Number PNA4211F
Manufacturer Panasonic Semiconductor
Description Photodetection
Published May 9, 2005
Detailed Description Photo IC PNA4211F Bipolar Integrated Circuit with Photodetection Function Unit : mm 5.3 max. 2-1.6±0.1 2-0.8±0.1 1.8±0....
Datasheet PDF File PNA4211F PDF File

PNA4211F
PNA4211F

Overview
Photo IC PNA4211F Bipolar Integrated Circuit with Photodetection Function Unit : mm 5.
3 max.
2-1.
6±0.
1 2-0.
8±0.
1 1.
8±0.
3 1.
0±0.
2 0.
6±0.
2 0.
75±0.
1 1.
0 1.
0 Features Built-in amplifier circuit 9.
4±0.
3 4.
3 max.
10 9 8 7 6 ø3.
2 Dep.
0.
1 10˚ Supports CD and 4-speed CD-ROM 1.
0 1 10-0.
4 +0.
1 –0.
15 2 34 5.
0±0.
1 10˚ 5 10-0.
35±0.
1 0.
2 +0.
1 –0.
05 x 4.
0 ±0.
1 x : 0.
0±0.
2 y : 0.
6±0.
2 θ : 45±2˚ Unit : µm 10˚ 10˚ 0.
2 Block Diagram 5˚ 5˚ + 1 – D + 2 – A 3 – 4 + – 5 + B C E F + – 10 Dimensions of detection area 0.
3±0.
2mm from package center 9 20 E 5 C 8 20 D B F 13 0 A x 7 – + 6 13 0 10 5 Pin Description Pin No.
1 2 3 4 5 Function D Out A Out COMMON GND B Out C Out Pin No.
6 7 8 9 10 Function E Out COMMON GND VC VCC F Out y θ 5 45˚ x 1 Photo IC PNA4211F Absolute Maximum Ratings (Ta = 25˚C) Parameter Power supply voltage Power dissipation Operating ambient temperature Storage temperature Symbol VCC PD Topr Tstg Ratings +6 115 –20 to +70 –30 to +95 Unit V mW ˚C ˚C Electro-Optical Characteristics (VCC = 2.
5V, Vref = 0V, VEE = – 2.
5V, RL = 10kΩ, Ta = 25˚C ± 3˚C ) Parameter Current of all circuits Output voltage Output offset voltage Output offset voltage difference Frequency characteristics Symbol ICC VO VO(offset) ∆VO(offset) fc (A+ C ) – ( B + D ) E–F λ = 780nm, –3dB, A to D Pl = 10µW, λ = 780nm, A to D Pl = 10µW, λ = 780nm, E, F –20 –20 –20 Conditions min typ 2.
2 300 660 0 0 0 8 +20 +20 +20 max 4.
0 Unit mA mV mV mV MHz Note 1) The reference voltage for the output voltage and output offset voltage is Vref (8-pin voltage).
Note 2) The output voltage does not include the output offset voltage.
2 ...


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