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PNZ108CL

Panasonic Semiconductor
Part Number PNZ108CL
Manufacturer Panasonic Semiconductor
Description Silicon NPN Phototransistor
Published May 9, 2005
Detailed Description Phototransistors PNZ108CL Silicon NPN Phototransistor Unit : mm For optical control systems Features High sensitivity ...
Datasheet PDF File PNZ108CL PDF File

PNZ108CL
PNZ108CL

Overview
Phototransistors PNZ108CL Silicon NPN Phototransistor Unit : mm For optical control systems Features High sensitivity : ICE(L) = 3.
5 mA (min.
) (at L = 500 lx) Wide directional sensitivity for easy use Fast response : tr = 5 µs (typ.
) Signal mixing capability using base pin 1.
0± 0.
15 3.
0±0.
3 12.
7 min.
2.
0±0.
1 0.
2±0.
05 3-ø0.
45±0.
05 2.
54±0.
25 0 0± 1.
5 .
1 Small size (low in height) package 45± 3˚ Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VCBO VECO VEBO IC PC Topr Tstg Ratings 20 30 3 5 20 100 –25 to +85 –30 to +100 Unit V V V V mA mW ˚C ˚C ø5.
75 max.
ø4.
2±0.
2 3 1 2 1: Emitter 2: Base 2: Collector Electro-Optical Characteristics (Ta = 25˚C) Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Rise time Fall time Collector saturation voltage *1 *2 Symbol ICEO ICE(L) λP θ tr*2 tf*2 VCE(sat) *3 Conditions VCE = 10V VCE = 10V, L = 500 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 5mA RL = 100Ω ICE(L) = 1mA, L = 1000 lx*1 lx*1 min 3.
5 typ 0.
05 6 900 80 5 6 0.
3 max 2 Unit µA mA nm deg.
µs µs 0.
6 V Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
Switching time measurement circuit Sig.
IN VCC (Input pulse) Sig.
OUT (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) ,, ,, ,, *3 I CE(L) 50Ω RL Classifications Class ICE(L) (mA) Q 3.
5 to 6.
0 R 5.
0 to 9.
1 S > 7.
5 Note) Difficult to guarantee compliance with moisture resistance standard (MIL-STD-202D).
1 Phototransistors PNZ108CL PC — Ta 120 20...


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