MITSUBISHI MITSUBISHI SEMICONDUCTOR SEMICONDUCTOR Module>
PS11016 PS11016
FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED TYPE TYPE
PS11016
INTEGRATED FUNCTIONS AND FEATURES
• 3-phase IGBT inverter bridge configured by the latest 3rd. generation IGBT and diode technologies. • Circuit for dynamic braking of motor regenerative energy. • Inverter output current capability IO (Note 1): Type Name 100% load 150% over load 11. 0A (rms) 16. 5A (rms), 1min PS11016 (Note 1) : The inverter output current is assumed to be sinusoidal and the peak current value of each of the 2 above loading cases is defined as : IOP = IO × √
INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS:
• For P-Side IGBTs : Drive circuit, High voltage isolated high-speed level shifting, Short-circuit protection (SC), Bootstrap circuit supply scheme (Single drive-power-supply) and Under voltage protection (UV). • For N-Side IGBTs : Drive circuit, Short circuit protection (SC), Control-supply Under voltage and Over voltage protection (OV/UV), System Over-temperature protection (OT), Fault output (FO ) signaling circuit, and Current-Limit warning signal output (CL) • For Brake circuit IGBT : Drive circuit • Warning and Fault signaling : FO1 : Short circuit protection for lower-leg IGBTs and Input interlocking against spurious arm shoot-through. FO2 : N-side control supply abnormality locking (OV/UV) FO3 : System over-temperature protection (OT). CL : Warning for inverter current overload condition • For system feedback control : Analogue signal feedback reproducing actual inverter phase current (3φ). • Input Interface : 5V CMOS/TTL compatible, Schmitt trigger input, and Arm-Shoot-Through interlock protection.
APPLICATION Acoustic noise-less 2. 2kW/AC200V class 3 phase inverter and other motor control applications.
PACKAGE OUTLINES
80. 5 ± 1 71. 5 ± 0. 5 0. 5
0. 5
4-φ4 23
20. 4 ± 1
Terminals Assignment: 1 2 3 4 5 6...