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BC107

Philips
Part Number BC107
Manufacturer Philips
Description NPN Transistor
Published May 11, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BC107; BC108; BC109 NPN general purpose transistors Product specification Su...
Datasheet PDF File BC107 PDF File

BC107
BC107

Overview
DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BC107; BC108; BC109 NPN general purpose transistors Product specification Supersedes data of 1997 Jun 03 File under Discrete Semiconductors, SC04 1997 Sep 03 Philips Semiconductors Product specification NPN general purpose transistors FEATURES • Low current (max.
100 mA) • Low voltage (max.
45 V).
APPLICATIONS • General purpose switching and amplification.
DESCRIPTION NPN transistor in a TO-18; SOT18 metal package.
PNP complement: BC177.
3 BC107; BC108; BC109 PINNING PIN 1 2 3 emitter base collector, connected to the case DESCRIPTION handbook, halfpage 1 3 2 MAM264 2 1 Fig.
1 Simplified outline (TO-18; SOT18) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BC107 BC108; BC109 VCEO collector-emitter voltage BC107 BC108; BC109 ICM Ptot hFE peak collector current total power dissipation DC current gain BC107 BC108 BC109 fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz Tamb ≤ 25 °C IC = 2 mA; VCE = 5 V 110 110 200 100 450 800 800 − MHz open base − − − − 45 20 200 300 V V mA mW open emitter − − 50 30 V V CONDITIONS MIN.
MAX.
UNIT 1997 Sep 03 2 Philips Semiconductors Product specification NPN general purpose transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO BC107 BC108; BC109 VCEO collector-emitter voltage BC107 BC108; BC109 VEBO emitter-base voltage BC107 BC108; BC109 IC ICM IBM Ptot Tstg Tj Tamb collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C open collector open base PARAMETER collector-base voltage CONDITIONS open emitter BC107; BC108; BC109 MIN.
− − − − − − − − − − −65 − −65 MAX.
50 30 45 20 6 5 100 200 200 300 +150 175 +150 V V V V V V UNIT mA mA mA mW °C °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-c Note 1.
Transistor mounted on an FR4 printed-circuit board.
PARAMETER thermal resista...


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