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NTE570

NTE Electronics
Part Number NTE570
Manufacturer NTE Electronics
Description Silicon Controlled Avalanche Diode
Published May 12, 2005
Detailed Description NTE570 Silicon Controlled Avalanche Diode Absolute Maximum Ratings: Peak Reverse Voltage, VRM . . . . . . . . . . . . . ...
Datasheet PDF File NTE570 PDF File

NTE570
NTE570

Overview
NTE570 Silicon Controlled Avalanche Diode Absolute Maximum Ratings: Peak Reverse Voltage, VRM .
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130V Allowable Avalanche Current (Square Wave Single Pulse 100µs), IZSM .
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1.
0A Operating Junction Temperature Range, TJ .
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–40° to +150°C Storage temperature Range, Tstg .
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–40° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Avalanche Voltage Reverse Current Reverse Current (High Temperature) Temperature Dependency of VZ Symbol VZ IR IR(H) J Test Conditions IZ = 1mA Instantaneous VR = 130V VR = 130V, TA = +100°C IZ = 1mA Min 135 – – – Typ – – – 0.
15 Max 180 10 50 – Unit V µA µA V/°C 1.
070 (27.
2) Min .
291 (7.
4) Max .
032 (0.
83) Dia Max Color Band Denotes Cathode...


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