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NTE586

NTE Electronics
Part Number NTE586
Manufacturer NTE Electronics
Description Silicon Rectifier Diode Schottky Barrier / Fast Switching
Published May 12, 2005
Detailed Description NTE586 Silicon Rectifier Diode Schottky Barrier, Fast Switching Features: D Low Switching Noise D Low Forward Voltage Dr...
Datasheet PDF File NTE586 PDF File

NTE586
NTE586

Overview
NTE586 Silicon Rectifier Diode Schottky Barrier, Fast Switching Features: D Low Switching Noise D Low Forward Voltage Drop D High Current Capability D High Reliability D High Surge Capability Maximum Ratings and Electrical Characteristics: (TA = +25°C unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Recurrent Peak Reverse Current .
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40V Maximum RMS Voltage .
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28V Maximum DC Blocking Voltage .
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40V Maximum Average Forward Rectified Current (375” .
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5mm) lead length at TL = +95°C).
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3.
0A Peak Forward Surge Current (8.
3ms single half sine–wave superimposed on rated load TL = +75°C) .
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80A Maximum Instantaneous Forward Voltage at 3A DC (Note 1) .
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525V Maximum Average Reverse Current at Rated DC Blocking Voltage TA = +25°C .
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1.
0mA TA = +100°C .
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10mA Typical Thermal Resistance, Junction–to–Ambient (Note 2), RthJA .
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80°C/W Typical Junction Capacitance (Note 3) .
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110pF Operating Junction Temperature Range TJ .
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–65° to +125°C Storage Temperature Range TSTG .
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–65° to +125°C Note 1.
me...


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