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NTE6409

NTE Electronics
Part Number NTE6409
Manufacturer NTE Electronics
Description Unijunction Transistor
Published May 12, 2005
Detailed Description NTE6409 Unijunction Transistor Description: The NTE6409 is designed for use in pulse and timing circuits, sensing circui...
Datasheet PDF File NTE6409 PDF File

NTE6409
NTE6409

Overview
NTE6409 Unijunction Transistor Description: The NTE6409 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits.
Features: D Low Peak Point Current: 2µA Max D Low Emitter Reverse Current: 200nA Max D Passivated Surface for Reliability & Uniformity Absolute Maximum Ratings: (TA = +25°C, unless otherwise specified) Power Dissipation (Note 1), PD .
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300mW RMS Emitter Current, IE(RMS) .
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50mA Peak Pulse Emitter Current (Note 2), iE .
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2A Emitter Reverse Voltage, VB2E .
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30V Interbase Voltage, VB2B1 .
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35V Operating Junction Temperature Range, TJ .
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–65° to +125°C Storage Temperature Range, Tstg .
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–65° to +150°C Note 1.
Derate 3mW/°C increase in ambient temperature.
The total power dissipation (available power to Emitter and Base–Two) must be limited by the external circuitry.
Note 2.
Capacitor discharge: 10µF or less, 30V or less Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Intrinsic Standoff Ratio Interbase Resistance Interbase Resistance Temperature Coefficient Emitter Saturation Voltage Symbol η rBB αrBB Test Conditions VB2B1 = 10V, Note 3 VB2B1 = 3V, IE = 0 VB2B1 = 3V, IE = 0, TA = –55° to +125°C Min 0.
68 4.
7 0.
1 – – – – 8 6 Typ – 7.
0 – 3.
5 15 0.
005 1 10 7 Max 0.
82 9.
1 0.
9 – – 0.
2 2 18 – kΩ %/°C V mA µA µA mA V Unit VEB1(sat) VB2B1 = 10V, IE...


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