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MZ0912B100Y

Philips
Part Number MZ0912B100Y
Manufacturer Philips
Description NPN microwave power transistors
Published May 12, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product specification Super...
Datasheet PDF File MZ0912B100Y PDF File

MZ0912B100Y
MZ0912B100Y

Overview
DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product specification Supersedes data of June 1992 1997 Feb 20 Philips Semiconductors Product specification NPN microwave power transistors FEATURES • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry improves power sharing and low thermal resistance • Input and output matching cell allows an easier design of circuits.
APPLICATIONS • Common base class-C broadband pulse power amplifiers o...


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