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NDB4060

Fairchild
Part Number NDB4060
Manufacturer Fairchild
Description N-Channel MOSFET
Published May 12, 2005
Detailed Description July 1996 NDP4060 / NDB4060 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enha...
Datasheet PDF File NDB4060 PDF File

NDB4060
NDB4060


Overview
July 1996 NDP4060 / NDB4060 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features 15A, 60V.
RDS(ON) = 0.
10Ω @ VGS=10V.
Critical DC electrical parameters specified at elevated temperature.
Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extreme...



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