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NDB7061L

Fairchild
Part Number NDB7061L
Manufacturer Fairchild
Description N-Channel MOSFET
Published May 12, 2005
Detailed Description June 1996 NDP7061L / NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These ...
Datasheet PDF File NDB7061L PDF File

NDB7061L
NDB7061L

Overview
June 1996 NDP7061L / NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features 60 A, 60 V.
RDS(ON) = 0.
018 Ω @ VGS= 5 V RDS(ON) = 0.
013 Ω @ VGS= 10 V.
Low drive requirements allowing operation directly from logic drivers.
VGS(TH) < 2.
0V.
Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VDGR VGSS ID Parameter Drain-Source Voltage T C = 25°C unless otherwise noted NDP7061L 60 60 ± 16 ± 25 60 180 130 0.
87 -65 to 175 NDB7061L Units V V V Drain-Gate Voltage (RGS < 1 MΩ) Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 µs) Drain Current - Continuous - Pulsed A PD Maximum Power Dissipation @ TC = 25°C Derate above 25°C W W/°C °C TJ,TSTG Operating and Storage Temperature Range © 1997 Fairchild Semiconductor Corporation NDP7061L Rev.
C1 Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE AVALANCHE RATINGS (Note 1) W DSS IAR BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Single Pulse Drain...


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