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NDB708AE

Fairchild
Part Number NDB708AE
Manufacturer Fairchild
Description N-Channel MOSFET
Published May 12, 2005
Detailed Description May 1994 NDP708A / NDP708AE / NDP708B / NDP708BE NDB708A / NDB708AE / NDB708B / NDB708BE N-Channel Enhancement Mode Fie...
Datasheet PDF File NDB708AE PDF File

NDB708AE
NDB708AE

Overview
May 1994 NDP708A / NDP708AE / NDP708B / NDP708BE NDB708A / NDB708AE / NDB708B / NDB708BE N-Channel Enhancement Mode Field Effect Transistor General Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features 60 and 54A, 80V.
RDS(ON) = 0.
022 and 0.
025Ω.
Critical DC electrical parameters specified at elevated temperature.
Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
175°C maxi...


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