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NDC7001C

Fairchild
Part Number NDC7001C
Manufacturer Fairchild
Description Dual N&P-Channel MOSFET
Published May 12, 2005
Detailed Description March 1996 NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description These dual N and P-...
Datasheet PDF File NDC7001C PDF File

NDC7001C
NDC7001C

Overview
March 1996 NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching.
These devices is particularly suited for low voltage, low current, switching, and power supply applications.
Features N-Channel 0.
51A, 50V, RDS(ON) = 2Ω @ VGS=10V P-Channel -0.
34A, -50V.
RDS(ON)= 5Ω @ VGS=-10V.
High density cell design for low RDS(ON).
Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities.
High saturation current.
____________________________________________________________________________________________ 4 3 5 2 6 SuperSOTTM-6 1 Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage T A = 25°C unless otherwise noted N-Channel 50 20 (Note 1a) P-Channel -50 -20 -0.
34 -1 0.
96 0.
9 0.
7 -55 to 150 Units V V A Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed 0.
51 1.
5 PD Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c) W TJ,TSTG Operating and Storage Temperature Range °C THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 130 60 °C/W °C/W © 1997 Fairchild Semiconductor Corporation NDC7001C.
SAM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Type Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA VGS = 0 V, ID = -250 µA Zero Gate Voltage Drain Current VDS = 40 V, VGS = 0 V TJ = 125°C VDS = -40 V, VGS = 0 V TJ = 125°C IGSSF IGSSR VGS(th) Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 20 V, VDS = 0 V VGS = -20 V, VDS= 0 V VDS = VGS, ID = 250 µA TJ = 1...


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