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NDP5060

Fairchild
Part Number NDP5060
Manufacturer Fairchild
Description N-Channel Enhancement Mode Field Effect Transistor
Published May 12, 2005
Detailed Description October 1996 NDP5060 / NDB5060 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel e...
Datasheet PDF File NDP5060 PDF File

NDP5060
NDP5060

Overview
October 1996 NDP5060 / NDB5060 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features 26 A, 60 V.
RDS(ON) = 0.
05 Ω @ VGS= 10 V.
Critical DC electrical parameters specified at elevated temperature.
Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VDGR VGSS ID Parameter Drain-Source Voltage T C = 25°C unless otherwise note NDP5060 60 60 ±20 ±40 26 78 68 0.
45 -65 to 175 NDB5060 Units V V V Drain-Gate Voltage (RGS < 1 MΩ) Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 µs) Drain Current - Continuous - Pulsed A PD Total Power Dissipation @ TC = 25°C Derate above 25°C W W/°C °C TJ,TSTG Operating and Storage Temperature Range © 1997 Fairchild Semiconductor Corporation NDP5060 Rev.
A Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE AVALANCHE RATINGS (Note 1) W DSS IAR BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) ID(on) gFS Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current VDD = 3...


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