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NDP7050

Fairchild
Part Number NDP7050
Manufacturer Fairchild
Description N-Channel Enhancement Mode Field Effect Transistor
Published May 12, 2005
Detailed Description March 1996 NDP7050 / NDB7050 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enh...
Datasheet PDF File NDP7050 PDF File

NDP7050
NDP7050

Overview
March 1996 NDP7050 / NDB7050 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features 75A, 50V.
RDS(ON) = 0.
013Ω @ VGS=10V.
Critical DC electrical parameters specified at elevated temperature.
Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
_______________________________________________________________________________ D G S Absolute Maximum Ratings Symbol Parameter TC = 25°C unless otherwise noted NDP7050 NDB7050 Units VDSS VDGR VGSS ID Drain-Source Voltage Drain-Gate Voltage (RGS < 1 MΩ) Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 µs) Drain Current - Continuous - Pulsed 50 50 ± 20 ± 40 75 225 150 1 -65 to 175 275 V V V A PD Maximum Power Dissipation @ TC = 25°C Derate above 25°C W W/°C °C °C TJ,TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds © 1997 Fairchild Semiconductor Corporation NDP7050.
SAM Rev.
D Electrical Characteristics (T Symbol Parameter C = 25°C unless otherwise noted) Conditions Min Typ Max Units DRAIN-SOURCE AVALANCHE RATINGS (Note 1) WDSS IAR BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) ID(on...


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