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NDS8410S

Fairchild
Part Number NDS8410S
Manufacturer Fairchild
Description Single N-channel MOSFET
Published May 12, 2005
Detailed Description February 1997 NDS8410S Single N-Channel Enhancement Mode Field Effect Transistor General Description SO-8 N-Channel enh...
Datasheet PDF File NDS8410S PDF File

NDS8410S
NDS8410S

Overview
February 1997 NDS8410S Single N-Channel Enhancement Mode Field Effect Transistor General Description SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features 8.
6 A, 30 V.
RDS(ON) = 0.
02 Ω @ VGS = 10 V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used surface mount package.
____________________________________________________________________________________________ 5 6 7 8 4 3 2 1 ABSOLUTE MAXIMUM RATINGS T A = 25°C unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c) (Note 1a) NDS8410S 30 ±20 8.
6 30 2.
5 1.
2 1 -55 to 150 Units V V A W TJ,TSTG Operating and Storage Temperature Range °C THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W °C/W © 1997 Fairchild Semiconductor Corporation NDS8410S Rev.
C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) ID(on) gFS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA VDS = 24 V, VGS = 0 V TJ= 55°C Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 20 V, VDS = 0 V VGS = -20 V, VDS= 0 V VDS = VGS, ID = 250 µA TJ= 125°C Static Drain-Source On-Resistance VGS = 10 V, ID = 8.
6...


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