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NDS8839H

Fairchild
Part Number NDS8839H
Manufacturer Fairchild
Description Complementary MOSFET
Published May 12, 2005
Detailed Description March 1996 NDS8839H Complementary MOSFET Half Bridge General Description These Complementary MOSFET half bridge devices...
Datasheet PDF File NDS8839H PDF File

NDS8839H
NDS8839H

Overview
March 1996 NDS8839H Complementary MOSFET Half Bridge General Description These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage half bridge applications or CMOS applications when both gates are connected together.
Features N-Channel 5.
7A, 30V, RDS(ON)=0.
045Ω @ VGS=10V.
P-Channel -4.
0A, -30V, RDS(ON)=0.
09Ω @ VGS=-10V.
High density cell design or extremely low RDS(ON).
High power and current handling capability in a widely used surface mount package.
Matched pair for equal input capacitance and power capability .
________________________________________________________________________________ V+ P-Gate Vout Vout Vout N -Gate Vout V- Absolute Maximum Ratings S...


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