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NDS9925A

Fairchild
Part Number NDS9925A
Manufacturer Fairchild
Description Dual N-Channel MOSFET
Published May 12, 2005
Detailed Description May 1998 NDS9925A Dual N-Channel Enhancement Mode Field Effect Transistor General Description SO-8 N-Channel enhancemen...
Datasheet PDF File NDS9925A PDF File

NDS9925A
NDS9925A

Overview
May 1998 NDS9925A Dual N-Channel Enhancement Mode Field Effect Transistor General Description SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features 4.
5 A, 20 V.
RDS(ON) = 0.
060 Ω @ VGS = 4.
5 V RDS(ON) = 0.
075 Ω @ VGS = 2.
7 V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used surface mount package.
Dual MOSFET in surface mount package.
SOT-23 SuperSOTTM -6 SuperSOTTM -8 SO-8 SOT-223 SOIC-16 D2 D1 D1 D2 S ND 5A 2 99 S2 G2 5 6 7 8 4 3 2 1 SO-8 pin 1 S1 G1 Absolute Maximum Ratings Symbol Parameter TA = 25°C unless otherwise noted NDS9925A Units VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed (Note 1a) 20 ±8 4.
5 15 2 (Note 1a) (Note 1b) (Note 1c) V V A PD Power Dissipation for Dual Operation Power Dissipation for Single Operation W 1.
6 1 0.
9 -55 to 150 °C TJ,TSTG Operating and Storage Temperature Range THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 °C/W °C/W © 1998 Fairchild Semiconductor Corporation NDS9925A Rev.
A Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS (TA = 25°C unless otherwise noted) Conditions Min Typ Max Units BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) ID(on) IS VSD Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 0 V, ID = 250 µA VDS = 16 V, VGS = 0 V VGS = 8 V, VDS = 0 V VGS = ...


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