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NDT410EL

Fairchild

N-Channel MOSFET

August 1996 NDT410EL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Power SOT N-Cha...


NDT410EL

Fairchild


Octopart Stock #: O-474549

Findchips Stock #: 474549-F

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Description
August 1996 NDT410EL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Power SOT N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance
More View , provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features 2.1A 100V. RDS(ON) = 0.25Ω @ VGS = 5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ___________________________________________________________________________________________ D D G D S G S ABSOLUTE MAXIMUM RATINGS T A = 25°C unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c) (Note 1a) NDT410EL 100 20 2.1 10 3 1.3 1.1 -65 to 150 Units V V A W TJ,TSTG Operating and Storage Temperature Range °C THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 42 12 °C/W °C/W * Order option J23Z for cropped center drain lead. © 1997 Fairchild Semiconductor Corporation NDT410EL Rev. B1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE AVALANCHE RATINGS (Note 2) W DSS IAR Single Pulse Drain-Source Avalanche Energy VDD = 50 V, ID = 10A Maximum Drain-Source Avalanche Current 15 10 mJ A OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) ID(on) gFS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA VDS = 80 V, VGS = 0 V TJ= 55°C Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 20 V, VDS = 0 V VGS = -20 V, VDS= 0 V VDS = VGS, ID = 250 µA TJ= 125°C Static Drain-Source On-Resistance VGS = 5 V, ID = 2.1 A TJ= 125°C On-State Drain Current Forward Transconductance VGS = 5 V, VDS = 5 V VDS = 10 V, ID = 2.1 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz 10 6 1 0.65 1.5 1.1 0.2 0.37 100 1 10 100 -100 V µA µA nA nA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage 2 1.5 0.25 0.5 A S V Ω DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance 528 85 20 pF pF pF SWITCHING CHARACTERISTICS (Note 2) Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-






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