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NE32500

Part Number	NE32500
Manufacturer	NEC
Description	C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
Published	May 12, 2005
Detailed Description	DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32500, NE27200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL H...
Datasheet	NE32500 PDF File

Overview

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32500, NE27200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons.
Its excellent low noise and high associated gain make it suitable for commercial systems, industrial and space applications.
FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.
45 dB TYP.
, Ga = 12.
5 dB TYP.
at f = 12 GHz • Gate Length : Lg = 0.
2 µm • Gate Width : Wg = 200 µm ORDERING INFORMATION PART NUMBER NE32500 NE27200 Standard (Grade D) Special, specific (Grade C and B) QUA...

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