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NE334S01-T1

NEC
Part Number NE334S01-T1
Manufacturer NEC
Description C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Published May 12, 2005
Detailed Description DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE334S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIP...
Datasheet PDF File NE334S01-T1 PDF File

NE334S01-T1
NE334S01-T1

Overview
DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE334S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE334S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons.
Its excellent low noise and high associated gain make it suitable for TVRO and another commercial systems.
2.
0 ± 0.
2 PACKAGE DIMENSIONS (Unit: mm) FEATURES • • Super Low Noise Figure & High Associated Gain NF = 0.
25 dB TYP.
, Ga = 16.
0 dB TYP.
at f = 4 GHz Gate Width: Wg = 280 mm 1 2.
0 ± 0.
2 ORDERING INFORMATION PART NUMBER NE334S01-T1 NE334S01-T1B SUPPLYING FORM Tape & reel 1000 pcs.
/reel Tape & reel 4000 pcs.
/reel MARKING C 4 3 0.
65 TYP.
1.
2.
3.
4.
Source Drain Source Gate ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGS ID Ptot Tch Tstg 4.
0 –3.
0 IDSS 300 125 –65 to +125 V V mA mW °C °C 1.
9 ± 0.
2 1.
6 0.
125 ± 0.
05 0.
4 MAX.
4.
0 ± 0.
2 RECOMMENDED OPERATING CONDITION (TA = 25 °C) CHARACTERISTIC Drain to Source Voltage Drain Current Input Power SYMBOL VDS ID Pin MIN.
TYP.
2 15 MAX.
2.
5 20 0 Unit V mA dBm Document No.
P11139EJ3V0DS00 (3rd edition) Date Published October 1996 P Printed in Japan © 1.
5 MAX.
2.
0 ± 0.
2 0.
5 TYP.
2 C 1996 NE334S01 ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETER Gate to Source Leak Current Saturated Drain Current Gate to Source Cutoff Voltage Transconductance Noise Figure Associated Gain SYMBOL IGSO IDSS VGS(off) gm NF Ga 15.
0 20 MIN.
TYP.
0.
5 80 MAX.
10 150 UNIT TEST CONDITIONS VGS = -3 V VDS = 2 V, VGS = 0 V VDS = 2 V, ID = 100 mA VDS = 2 V, ID = 14 mA VDS = 2 V, ID = 15 mA, f = 4 GHz mA mA V mS -0.
2 70 -0.
9 85 0.
25 16.
0 -2.
5 0.
35 dB dB 2 NE334S01 TYPICAL CHARACTERISTICS (TA = 25 °C) TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE 500 100 VGS = 0 V DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE Ptot - Total Power Dissipation - mW 400 ID - Drain Current - mA 80...


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