DatasheetsPDF.com

DB-900-80W

ST Microelectronics
Part Number DB-900-80W
Manufacturer ST Microelectronics
Description RF Power Amplifier Demoboard
Published May 13, 2005
Detailed Description DB-900-80W 80W / 26V / 869-894 MHz PA using 2x PD57045S The LdmoST FAMILY PRELIMINARY DATA RF POWER AMPLIFIER DEMOBOARD...
Datasheet PDF File DB-900-80W PDF File

DB-900-80W
DB-900-80W


Overview
DB-900-80W 80W / 26V / 869-894 MHz PA using 2x PD57045S The LdmoST FAMILY PRELIMINARY DATA RF POWER AMPLIFIER DEMOBOARD USING TWO N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 80 W min.
with 13 dB gain over 869-894 MHz • 10:1 LOAD VSWR CAPABILITY • BeO FREE AMPLIFIER TYPICAL CDMA PERFORMANCE: IS-95 CD MA / 9ch FWD Pout = 14W Gain = 13 dB Nd = 22% ACPR (750 KHz) : -45 dBc ACPR (1.
98 MHz) : -60 dBc DESCRIPTION The DB-900-80W is a common source N-Channel enhancement-mode lateral Field-Effect RF power amplifier designed for IS-54/-136 & IS-95 base station applications.
The DB-900-80W is designed in cooperation with Europeenne de Telecomunications S.
A.
(www.
etsa.
rf), for high gain and broadband performance operating in common source mode at 26 V, capable of withstanding load mismatch up to 10:1 all phases and with harmonics lower than 30 dBc.
ABSOLUTE MAXIMUM RATINGS (TCASE = 25oC) Symbol VDD ID PDISS TCASE Pamb Supply voltage Drain Current Power dissipation at Tcase = +85°C Operating Case Temperature Max.
Ambient Temperature Parameter Value 32 9 135 -20 to +85 +55 Unit V A W o o ORDER CODE DB-900-80W MECH.
SPECIFICATION L=80 mm W=50 mm H=10 mm C C 1/6 November, 20 2002 DB-900-80W ELECTRICAL SPECIFICATION (Tamb = +25oC, Vdd = 26V, Idq = 2 x 200 mA) Symbol FREQ.
Gain P1dB Flatness Flatness ND at P1dB IRTL Harmonic VSWR Spurious IMD3 Frequency Range POUT = 80 W Over frequency range: 869 - 894 MHz Over frequency range and @ POUT = 80 W POUT from 0.
1W to 80 W P1dB Input return Loss POUT from 0.
1W to 80 W POUT = 80 W Load Mismatch all phases @ POUT = 80 W 10:1 VSWR all phases and POUT from 0.
1 to 80W POUT = 80 WPEP 10:1 -76 -25 dBc dBc 45 50 -20 -40 -15 -30 Test Conditions Min.
869 13 80 14 90 +/- 0.
5 1 Typ.
Max.
894 Unit MHz dB W dB dB % dB dBc TYPICAL CDMA PERFORMANCE IS 95 / 9ch FWD (Vdd = 26V, Idq = 300mA) Frequency Pout CH PWR Pin CH PWR Pout CH PWR ACPR -750 KHz ACPR +750 KHz ACPR -1.
98 MHz ACPR +1.
...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)