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NTP52N10

ON Semiconductor
Part Number NTP52N10
Manufacturer ON Semiconductor
Description Power MOSFET
Published May 13, 2005
Detailed Description NTP52N10 Power MOSFET 52 Amps, 100 Volts N−Channel Enhancement Mode TO−220 Features • Source−to−Drain Diode Recovery Ti...
Datasheet PDF File NTP52N10 PDF File

NTP52N10
NTP52N10

Overview
NTP52N10 Power MOSFET 52 Amps, 100 Volts N−Channel Enhancement Mode TO−220 Features • Source−to−Drain Diode Recovery Time comparable to a Discrete • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated Temperature http://onsemi.
com Typical Applications • PWM Motor Controls • Power Supplies • Converters MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Drain−to−Source Voltage (RGS = 1.
0 MΩ) Gate−to−Source Voltage − Continuous − Non−Repetitive (tpv10 ms) Drain − Continuous @ TA 25°C − Continuous @ TA 100°C − Pulsed (Note 1.
) Total Power Dissipation @ TA 25°C Derate above 25°C Operating and Storage Temperature Range Single Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 50 V, VGS = 10 Vdc, IL(pk) = 40 A, L = 1.
0 mH, RG = 25 Ω) Thermal Resistance − Junction−to−Case − Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VDGR VGS VGSM ID ID IDM PD TJ, Tstg EAS Value 100 100 "20 "40 52 40 156 178 1.
43 −55 to +150 800 Adc Unit Vdc Vdc Vdc 52 AMPERES 100 VOLTS 30 mΩ @ VGS = 10 V N−Channel D G S MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain 4 Watts W/°C °C mJ TO−220AB CASE 221A STYLE 5 1 NTP52N10 LLYWW 1 Gate 3 Source 2 Drain °C/W RθJC RθJA TL 0.
7 62.
5 260 °C 2 3 NTP52N10 LL Y WW 1.
Pulse Test: Pulse Width = 10 µs, Duty Cycle = 2%.
= Device Code = Location Code = Year = Work Week ORDERING INFORMATION Device NTP52N10 Package TO−220AB Shipping 50 Units/Rail © Semiconductor Components Industries, LLC, 2003 1 December, 2003 − Rev.
2 Publication Order Number: NTP52N10/D NTP52N10 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = 100 Vdc, TJ =25°C) (VGS = 0 Vdc, VDS = 100 Vdc, TJ =125°C) Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 ...


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