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P0102BL

ST Microelectronics
Part Number P0102BL
Manufacturer ST Microelectronics
Description SCR Thyristor
Published May 13, 2005
Detailed Description P0102BL Sensitive high immunity 0.25 A SCR Thyristor Datasheet - production data Features  IT(RMS) 0.25 A  Low 200 ...
Datasheet PDF File P0102BL PDF File

P0102BL
P0102BL

Overview
P0102BL Sensitive high immunity 0.
25 A SCR Thyristor Datasheet - production data Features  IT(RMS) 0.
25 A  Low 200 µA gate current  High noise immunity 200 V/µs  ECOPACK®2 compliant component Applications  Standby mode power supplies  Smoke detectors  DC 24/48 V proximity sensors  Gate driver for large Thyristors  Overvoltage crowbar protection  Capacitive ignition circuit Description Thanks to highly sensitive triggering levels, the 0.
25 A P0102BL SCR Thyristor is suitable for all applications where available gate current is limited.
Its high immunity makes it ideal for high electric noise circuits.
The surface mount SOT23-3L package allows compact SMD based designs for automated manufacturing.
Table 1: Device summary Symbol Value Unit IT(RMS) VDRM/VRRM IGT Tj max.
0.
25 A 200 V 200 µA 125 °C August 2017 DocID030705 Rev 2 This is information on a product in full production.
1/8 www.
st.
com Characteristics P0102BL 1 Characteristics Table 2: Absolute maximum ratings (limiting values), Tj = 25 °C unless otherwise specified Symbol Parameter Value Unit IT(RMS) IT(AV) RMS on-state current (180 ° conduction angle) Average on-state current (180 ° conduction angle) Tamb = 36 °C 0.
25 0.
16 A ITSM Non repetitive surge peak on-state current (Tj initial = 25 °C I2t I2t value for fusing Critical rate of rise of on-state dl/dt current IG = 2 x IGT, tr ≤ 100 ns f = 60 Hz VDRM/VRRM Repetitive peak off-state voltage IGM Peak gate current tp = 20 µs PG(AV) Average gate power dissipation Tstg Storage junction temperature range Tj Operating junction temperature tp = 8.
3 ms tp = 10 ms tp = 10 ms Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C 7 6 0.
18 A A2s 50 A/µs 200 0.
5 0.
02 -40 to +150 -40 to +125 V A W °C °C Table 3: Electrical characteristics (Tj = 25 °C unless otherwise specified) Symbol Test conditions Value IGT VGT VGD VRG IH IL dV/dt VD = 12 V, RL = 140 Ω VD = VDRM, RL = 3.
3 kΩ, RGK = 1000 Ω IRG = 10 µA IT = 50 mA, RGK ...


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