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PSMN020-150W

Philips
Part Number PSMN020-150W
Manufacturer Philips
Description N-channel TrenchMOS transistor
Published May 17, 2005
Detailed Description Philips Semiconductors Objective specification TrenchMOS™ transistor PSMN020-150W FEATURES • ’Trench’ technology • V...
Datasheet PDF File PSMN020-150W PDF File

PSMN020-150W
PSMN020-150W

Overview
Philips Semiconductors Objective specification TrenchMOS™ transistor PSMN020-150W FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • High thermal cycling performance • Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 150 V ID = 73 A g RDS(ON) ≤ 20 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.
The device has very low on-state resistance.
It is intended for use in dc to dc converters and general purpose switching applications.
The PSMN020-150W is supplied in the SOT429 (TO247) conventional leaded package.
PINNING PIN 1 2 3 tab gate drain source drain DESCRIPTIO...


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